YMTC announces the successful development of 128-layer 3D NAND flash memory chip

According to news on April 13, YMTC announced today on its official website that its 128-layer QLC 3D NAND flash memory chip X2-6070 has been successfully developed and has been verified on terminal storage products such as SSDs from a number of controller manufacturers.


YMTC stated that X2-6070 is the industry’s first 128-layer QLC 3D NAND flash memory. It has the highest storage density per unit area, the highest I/O transmission speed, and the highest single NAND flash memory chip capacity among the known models in the industry. Also released this time is the 128-layer 512Gb TLC (3 bit/cell) flash memory chip X2-9060 to meet the needs of different application scenarios.

It is understood that each X2-6070 QLC flash memory chip provides a total storage capacity of 1.33Tb. In terms of I/O read and write performance, both X2-6070 and X2-9060 can achieve a data transfer rate of 1.6Gbps (Gigabits/s) under 1.2V Vccq voltage.

Yangtze River Storage said that the company has achieved a leap from 32 floors to 64 floors to 128 floors in just three years.

According to a report by the Financial Associated Press, mass production is expected from the end of 2020 to mid-2021, with a goal of reaching a monthly production capacity of 100,000 pieces; supply chain sources revealed that this flash memory has been sampled.

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