MOSFET performance improvement: Super Junction MOSFET (SJ-MOS)

[Guide]In the case of D-MOS, the electric field strength is the strongest at the P/N layer interface. When the electric field strength exceeds the limit of silicon, a breakdown phenomenon occurs, which is the voltage limit. On the other hand, in the case of SJ-MOS, the electric field strength is uniform in the N layer.

In the case of D-MOS, the electric field strength is the strongest at the P/N layer interface. When the electric field strength exceeds the limit of silicon, a breakdown phenomenon occurs, which is the voltage limit. On the other hand, in the case of SJ-MOS, the electric field strength is uniform in the N layer.

(1) SJ-MOS has a columnar P layer (P column layer) on the N layer. The P layer and the N layer are arranged alternately. (See Figure 3-9(b))

(2) By applying VDS, the depletion layer is expanded in the N layer, but its expansion method in SJ-MOS is different from that in general D-MOS. (For the electric field strength, see Figure 3-9 (a)/(b). The electric field strength will indicate the state of the depletion layer.

(3) In the case of D-MOS, the electric field strength is the strongest at the P/N layer interface. When the electric field strength exceeds the limit of silicon, a breakdown phenomenon occurs, which is the voltage limit. On the other hand, in the case of SJ-MOS, the electric field strength is uniform in the N layer.

(4) Therefore, SJ-MOS can adopt an N-layer design with lower resistance to achieve low on-resistance products.

Using the same size chip as DMOS, SJ-MOS can achieve lower on-resistance.

MOSFET performance improvement: Super Junction MOSFET (SJ-MOS)

Figure 3-9 (a) D-MOS (π-MOS) structure and electric field

MOSFET performance improvement: Super Junction MOSFET (SJ-MOS)

Figure 3-9 (b) SJ-MOS (DTMOS) structure and electric field

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