Leti and IRIG develop quantum integrated circuits in CMOS process

  

CEA-Leti and CEA-IRIG jointly developed the first quantum integrated circuit with quantum dots on a CMOS chip. The chip is manufactured using a 28nm FD-SOI process and integrates analog and digital functions (multiplexers, buffers). Converters, signal amplifiers, oscillators, level shifters, etc.).

This research also proves that CEA-Leti’s proprietary technology for cryogenic instruments in FD-SOI technology can also be used for other non-silicon quantum devices, such as superconducting qubits. Lo?ckLe Guevel, the lead author of the paper, explained that quantum integrated circuits are a proof-of-concept circuit that combines microelectronics benchmark testing with quantum dots and works at temperatures below Kelvin within a limited power budget.

Quantum silicon devices use all the elements required to design advanced circuits, and through FD-SOI implementation, circuit designers can use classic Electronic technology to embed qubit arrays in IP modules to build customized large-scale quantum silicon processors.

This research also proves that CEA-Leti’s proprietary technology for cryogenic instruments in FD-SOI technology can also be used for other non-silicon quantum devices, such as superconducting qubits. Lo?ckLe Guevel, the lead author of the paper, explained that quantum integrated circuits are a proof-of-concept circuit that combines microelectronics benchmark testing with quantum dots and works at temperatures below Kelvin within a limited power budget.

Quantum silicon devices use all the elements required to design advanced circuits, and through FD-SOI implementation, circuit designers can use classic electronic technology to embed qubit arrays in IP modules to build customized large-scale quantum silicon processors.

The Links:   SN74CBTLV3245ADGVR FP15R12NT3 SEMIKRONIGBT

Related Posts

Leave a Reply

Your email address will not be published. Required fields are marked *