Cree advances the construction of the world’s largest SiC device manufacturing plant and expansion of SiC production capacity

Durham, North Carolina, USA, August 31, 2020 – Cree, Inc. (Nasdaq: CREE) announced that Cree is advancing the industrial transformation from silicon (Si) to silicon carbide (SiC). In order to meet the growing demand for Cree’s groundbreaking Wolfspeed technology to support the growing market for electric vehicles (EV), 4G/5G communications and the industrial market, Cree announced in the fall of 2019 that the company will build silicon carbide (SiC) on the East Coast of the United States. ) corridor.

Cree advances the construction of the world’s largest SiC device manufacturing plant and expansion of SiC production capacity

Cree is currently building the world’s largest silicon carbide (SiC) manufacturing plant in Marcy, New York, USA. This new power and radio frequency manufacturing plant using leading cutting-edge technology will meet automotive-level standards and 200mm technology. At the same time, construction of a mega materials factory in Durham, North Carolina, is also underway. This new manufacturing plant will significantly increase the production capacity for Wolfspeed’s silicon carbide (SiC) and gallium nitride (GaN) businesses, and will be built into a larger, highly automated, and higher production capacity factory.

Cree advances the construction of the world’s largest SiC device manufacturing plant and expansion of SiC production capacity

Cree advances the construction of the world’s largest SiC device manufacturing plant and expansion of SiC production capacity

Gregg Lowe, CEO of Cree, said: “Cree will continue to increase investment in silicon carbide (SiC) manufacturing and R&D to support the growing demand for our technology worldwide. We believe that advanced semiconductor manufacturing will lead the acceleration of Key next-generation technologies play a vital role.”

The Links:   LB150X03-TL04 LQ084S2DG01

Related Posts

Leave a Reply

Your email address will not be published. Required fields are marked *